| PART |
Description |
Maker |
| SHP-400 |
SpecificationsHigh 50楼? 395 to 3200 MHz
SpecificationsHigh 50惟 395 to 3200 MHz
SpecificationsHigh 50Ω 395 to 3200 MHz
SpecificationsHigh 50Ω 395 to 3200 MHz
|
Mini-Circuits
|
| N2418ZC320 |
4757 A, 3200 V, SCR
|
WESTCODE SEMICONDUCTORS LTD
|
| AR372 AR372S32 |
3200 V, 705 A, 6 kA rectifier diode
|
POSEICO SPA
POSEICO[Power Semiconductors]
|
| C702LN C702 C702CB C702CP C702LD C702LM |
Phase Control SCR 1000 Amperes Average 3200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| SGA-5386-TR2 SGA-5386-TR1 SGA-5386 |
DC-3200 MHz Silicon Germanium HBT Cascadeable Gain Block
|
Stanford Microdevices
|
| 2SC4390 |
Adoption of MBIT process. High DC current gain (hFE=800 to 3200).
|
TY Semiconductor Co., Ltd
|
| HSDL-3200 |
HSDL-3200#001 · Infrared IrDA 1.2 Compliant 115.2Kb/s 3V Transceiver
|
Agilent (Hewlett-Packard)
|
| RBK84000A |
High Power General Purpose Rectifier (4000 Amperes Average 3200 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| MSA-0486-BLK |
0 MHz - 3200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
AGILENT TECHNOLOGIES INC
|
| AD8646ARMZ-R2 AD8646ARZ-REEL7 |
24 MHz Rail-to-Rail Dual Amplifier DUAL OP-AMP, 3200 uV OFFSET-MAX, 24 MHz BAND WIDTH, PDSO8
|
Analog Devices, Inc.
|
| SI-E1125_500-6 SI-E1125-500-6 SI-E1125/500-6 |
High voltage rectifiers 高压整流
High voltage rectifiers 6 A, 3200 V, SILICON, RECTIFIER DIODE
|
SEMIKRON[Semikron International]
|
